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What is STT-MRAM?

新型存储之MRAM资讯

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发表时间:2023-12-22 13:57作者:全球芯 | glochip.com来源:Netsol | MRAM | SRAM网址:http://glochip.com/news/
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STT-MRAM

STT-MRAM (also called STT-RAM or sometimes ST-MRAM and ST-RAM) is an advanced type of MRAM devices. STT-MRAM enables higher densities, low power consumption and reduced cost compared to regular (so-called Toggle MRAM) devices. The main advantage of STT-MRAM over Toggle MRAM is the ability to scale the STT-MRAM chips to achieve higher densities at a lower cost.

STT-MRAM has the potential to become a leading storage technology as it is a high-performance memory (can challenge DRAM and SRAM) that can scale well below 10nm and challenge the low cost of flash memory.

What is STT-MRAM?

STT stands for Spin-Transfer Torque. In an STT-MRAM device, the spin of the electrons is flipped using a spin-polarized current. This effect is achieved in a magnetic tunnel junction (MTJ) or a spin-valve, and STT-MRAM devices use STT tunnel junctions (STT-MTJ). A spin-polarized current is created by passing a current though a thin magnetic layer. This current is then directed into a thinner magnetic layer which transfers the angular momentum to the thin layer which changes its spin.

STT-MRAM structure diagram

What is perpendicular STT-MRAM?

A "regular" STT-MRAM structure (similar to the one you see above) uses an in-plane MTJ (iMTJ). Some STT-MRAM devices use a more optimized structure called perpendicular MTJ (pMTJ) in which the magnetic moments are perpendicular to the silicon substrate surface.

Perpendicular STT-MRAM is more scalable compared to iMTJ STT-MRAM and is also more cost competitive. Perpendicular STT-MRAM is thus a more promising technology to replace DRAM and other memory technologies

STT-MRAM chips

Several companies, including IBM and Samsung, Everspin, Avalanche Technologies, Spin Transfer Technologies and Crocus are developing STT-MRAM chips. In April 2016 Everspin announced that it started shipping 256Mb ST-MRAM samples to customers. The new chips demonstrate interface speeds comparable to DRAM, with DDR3 and DDR4 interfaces. Volume production is expected "soon".

STT-MRAM chips

In August 2016 Everspin started sampling pMTJ-based ST-MRAM chips. The first chips are also 256Mb in size, but the pMTJ versions offer improved performance, higher endurance, lower power, and better scalability compared to previous iMTJ ST-MRAM products. Everspin is now ramping out 256Mb pMTJ ST-MRAM production and is developing a scaled-down 1Gb version.



Latest STT-MRAM news

RAiTEK adopts Avalanche's space-grade MRAM for its satellite-based storage systems

pMTJ STT-MRAM developer Avalanche Technology announced that it is providing its Space Grade Persistent SRAM (P-SRAM) STT-MRAM products for satellite-based storage systems developed by RAiTEK.

Avalanche Technology MRAM chips render

RAiTEK has designed in a 16Mb device from Avalanche's Gen 2 Space Grade family to monitor data stream status, and a 1Gb Gen 3 Space Grade to support large configuration images for the onboard FPGA used in the drives, as part of their growing portfolio of data storage and processing solutions for the space industry.

Read the full story Posted: Sep 12,2023

STT-MRAM developer Numem secured its Series A funding round

High-performance STT-MRAM developer Numem announced that it has secured a Series A funding round, with investments from Cambium Capital and Doorga Capital. The company did not detail the investment amount.

Numem logo

In 2020, Numem announced that it has been selected for a NASA AI project, for which the company will supply its Numem NuRAM MRAM-based Memory.

Read the full story Posted: Sep 08,2023

NETSOL launches a stand-alone STT-MRAM product fabricated in Samsung Foundry’s 28nm FDSOI process

NETSOL released new 1Mb to 32Mb serial and 1Mb to 64Mb parallel STT-MRAM products through the Samsung Electronics Foundry.

STT-MRAM product family, NETSOL

NETSOL MRAM products are ideal for applications that need to store and retrieve data quickly and frequently due to STT-MRAM's virtually unlimited endurance and fast-write features. Ideal for code storage, data logging, backup and working memory in industrial devices/ equipment, it can replace NOR Flash, FeRAM, low-power SRAM and nvSRAM products, among others with unmatched performance and non-volatile features.

NETSOL STT-MRAM products provide fast read and write features without a delay in recording and storing data even when the system is powered off, and is cost-effective by enabling compact systems without the need for batteries or capacitors based on its non-volatile features.

Read the full story Posted: Aug 30,2023

Everspin Technologies reported its financial results for Q2 2023

Everspin Technologies its financial results for Q2 2023 - with revenues of $15.7 (up 7% compared to 2022), a net income of $3.9 million, and positive cash flow of $3.9 million (which includes a tax credit refund of $2 million). At the end of the quarter, cash and cash equivalents were $30.8 million

Everspin chip render

The company says that its product backlog into 2024 continues to be high, but the company is experiencing some headwinds from the semiconductor downturn.

Read the full story Posted: Aug 03,2023

Avalanche announces pre-production of its Gen-3 Space Grade Dual QSPI STT-MRAM solution for advanced SoCs and FPGAs

pMTJ STT-MRAM developer Avalanche Technology announced that its Gen-3 Space Grade Dual QSPI solution is now available in pre-production.

The devices are based on the company's latest generation STT-MRAM technology. Avalanche says that the new devices offer significant density, endurance, reliability, and power benefits, over existing memory solutions for aerospace and defense applications, particularly for easily configuring advanced SoCs and FPGAs, which are known to present complex design challenges.

Read the full story Posted: Jan 10,2023

Hprobe releases a new MRAM testing module to help increase production yields

Hprobe, a developer of testing equipment for magnetic devices, announced a new addition to its product line, the RF Pulse Module. The company says that this is the commercially available testing system to both collect statistics of error rate of the memory unit cell and take a deep look into switching dynamics of resistive memories.

Hprobe IBEX WAT H3DM Light photo

Hprobe's IBEX system

Hprobe says that the RF Pulse Module is two orders of magnitude faster than existing devices and can help increase manufacturing yields. Hprobe has already begun shipping to tier-1 companies and major research institutes around the world.

Read the full story Posted: Dec 03,2022

Everspin to build a new MRAM production line in Indiana, hopes to secuire government support

Earlier this year, Everspin Technologies announced that it aims to build a new production line in the state of Indiana, US, that will increase Everspin's production capacity for both Toggle MRAM and STT-MRAM. The company is working with state and federal government sources to secure funding for the new production line.

Everspin chip render

Everspin says it also plans to work with the local research community to enhance domestic research for MRAM technology development, creating a Technology Development Center at the proposed Indiana-based location. Everspin says that it is the only US-based commercial manufacturer of MRAM devices today, and increasing its capacity in the US is of strategic importance to its commercial and US Government partners.

Read the full story Posted: Nov 22,2022

Everspin reported its financial results for Q3 2022

Everspin Technologies announced reported its financial results for Q3 2022, with revenues of $15.2 million (close to the end of its guidance, and up 3% from last year) and a net income of $1.9 million.

Everspin Technologies chip photo

Everspin says that its product backlog remains strong, but customer inventory adjustments will have an impact on the backlog in coming quarters. The company continues to relieve its supply chain constraints, which is helping to address its unfulfilled toggle MRAM demand.

Read the full story Posted: Nov 10,2022

Everspin's latest EMxxLX STT-MRAM devices are commercially available

Earlier this year, Everspin Technologies announced its latest STT-MRAM devices, the EMxxLX xSPI serial interface memory. The company now announced that the EMxxLX devices are now commercially available.

Everspin chip render

The EMxxLX family is the only memory device offering density up to 64Mb, octal interface with 400MB/s bandwidth, and compatibility with the xSPI standard. The EMxxLX features 1000X faster write times compared to NOR flash.

Disclosure: the author of this post holds shares at Everspin

Read the full story Posted: Nov 02,2022

Avalanche Technology announced production of its 3rd-Gen 22nm MRAM devices

pMTJ STT-MRAM developer Avalanche Technology announced that its latest 3rd-Gen MRAM devices are now in production at its foundry partner, United Microelectronics Corporation (UMC). The company says that its new MRAM chips offer significant density, endurance, reliability and power benefits over existing non-volatile solutions.

Avalanche Technology SPnvSRAM G2 MRAM evaluation board photo

Avalanche's new Parallel x 32 series is offered as a standard product in various density options and has asynchronous SRAM-compatible read/write timings. Avalanche also says that it will soon start developing 16Gb MRAM chips.


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